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IPT020N10N3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPT020N10N3ATMA1
- Package: 8-PowerSFN
- Datasheet:
- Stock: 4655
- Description: IPT020N10N3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PG-HSOF-8 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 375W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 375W |
| Case Connection | DRAIN |
| Turn On Delay Time | 34 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2m Ω @ 150A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 272μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 11200pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 300A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 156nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 84 ns |
| Continuous Drain Current (ID) | 300A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain-source On Resistance-Max | 0.02Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Max Junction Temperature (Tj) | 175°C |
| Height | 2.4mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IPT020N10N3ATMA1 Description
IPT020N10N3ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 100V. The operating temperature of the IPT020N10N3ATMA1 is -55°C~175°C TJ and its maximum power dissipation is 375W Tc. IPT020N10N3ATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.
IPT020N10N3ATMA1 Features
N-channel,normal level
Excellent gate charge xRDS (on)product(FOM)
Extremely low on-resistance RDS(on)
High current capability
175°C operating temperature
Pb-free lead plating;RoHS compliant
Qualified according to JEDEC1)for target application
Halogen-free according to IEC61249-2-21
IPT020N10N3ATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
