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IPT007N06NATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPT007N06NATMA1
- Package: 8-PowerSFN
- Datasheet:
- Stock: 1475
- Description: IPT007N06NATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-F2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 375W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 375W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 0.75m Ω @ 150A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 280μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 16000pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 300A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 287nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 300A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain Current-Max (Abs) (ID) | 52A |
| Drain-source On Resistance-Max | 0.00075Ohm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
IPT007N06NATMA1 Description
The IPT007N06N in the HSOF-8 package is an N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. The IPT007N06N operates within ambient temperatures from -55 to 175°C and with a power dissipation of 375W.
IPT007N06NATMA1 Features
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Halogen-freeaccordingtoIEC61249-2-21
IPT007N06NATMA1 Applications
Forklift
Telecom
efuse
Point-of-load (POL)
Light electric vehicles (LEV) e.g. e-scooter, e-bikes or μ-car
