IPP65R190CFDXKSA1

IPP65R190CFDXKSA1 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 484 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1850pF @ 100V maximal input capacitance.This device conducts a continuous drain current (ID) of 17.5A, which is the maximum continuous current transistor can conduct.Turn-Off delay time?is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 53.2 ns.Its maximum pulsed drain current is 57.2A, which is also its maximum rating peak drainage current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).

IPP65R190CFDXKSA1 Features

the avalanche energy rating (Eas) is 484 mJ
a continuous drain current (ID) of 17.5A
the turn-off delay time is 53.2 ns
based on its rated peak drain current 57.2A.

IPP65R190CFDXKSA1 Applications

There are a lot of Infineon Technologies IPP65R190CFDXKSA1 applications of single MOSFETs transistors.

• Micro Solar Inverter
• LCD/LED TV
• Load switching
• Power Tools
• Lighting, Server, Telecom and UPS.
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• PFC stages, hard switching PWM stages and resonant switching
• General Purpose Interfacing Switch
• Server power supplies
• DC/DC converters