IPP65R190C7FKSA1

IPP65R190C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
NO: 376-IPP65R190C7FKSA1
Package: TO-220-3
Datasheet:
Stock: 7852
Description: IPP65R190C7FKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	PG-TO220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	CoolMOS™ C7
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	72W Tc
Turn On Delay Time	11 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 290μA
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 400V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	13A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Input Capacitance	1.15nF
Drain to Source Resistance	168mOhm
Rds On Max	190 mΩ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free