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ContactIPP200N15N3GXKSA1
IPP200N15N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPP200N15N3GXKSA1
- Package: TO-220-3
- Datasheet:
- Stock: 7914
- Description: IPP200N15N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 90μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1820pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 50A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 150V |
| Drain-source On Resistance-Max | 0.02Ohm |
| Pulsed Drain Current-Max (IDM) | 200A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 150W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 50A, 10V |
IPP200N15N3GXKSA1 Overview
A device's maximum input capacitance is 1820pF @ 75V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.As far as peak drain current is concerned, its maximum pulsed current is 200A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 150V, it supports the maximal dual supply voltage.Its overall power consumption can be reduced by using drive voltage (8V 10V).
IPP200N15N3GXKSA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 23 ns
based on its rated peak drain current 200A.
IPP200N15N3GXKSA1 Applications
There are a lot of Infineon Technologies IPP200N15N3GXKSA1 applications of single MOSFETs transistors.
- Telecom 1 Sever Power Supplies
- DC-to-DC converters
- LCD/LED/ PDP TV Lighting
- Industrial Power Supplies
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Lighting
- Power Management Functions
- Consumer Appliances
