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ContactIPP075N15N3GHKSA1
MOSFET (Metal Oxide) N-Channel Tube 7.5mOhm @ 100A, 10V ±20V 5470pF @ 75V 93nC @ 10V 150V TO-220-3
- Manufacturer: Infineon Technologies
- NO: 376-IPP075N15N3GHKSA1
- Package: TO-220-3
- Datasheet:
- Stock: 6544
- Description: MOSFET (Metal Oxide) N-Channel Tube 7.5mOhm @ 100A, 10V ±20V 5470pF @ 75V 93nC @ 10V 150V TO-220-3 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | OptiMOS™ |
| Published | 2011 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Power Dissipation | 300W |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5470pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 46 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Input Capacitance | 5.47nF |
| Drain to Source Resistance | 7.2mOhm |
| Rds On Max | 7.5 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
