IPP041N04NGXKSA1

IPP041N04NGXKSA1 Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 60 mJ.The maximum input capacitance of this device is 4500pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.Pulsed drain current is maximum rated peak drain current 400A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device supports dual supply voltages maximally powered by 40V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IPP041N04NGXKSA1 Features

the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 23 ns
based on its rated peak drain current 400A.

IPP041N04NGXKSA1 Applications

There are a lot of Infineon Technologies IPP041N04NGXKSA1 applications of single MOSFETs transistors.

• Micro Solar Inverter
• Telecom 1 Sever Power Supplies
• Consumer Appliances
• Industrial Power Supplies
• DC/DC converters
• LCD/LED/ PDP TV Lighting
• Server power supplies
• LCD/LED TV
• Solar Inverter
• General Purpose Interfacing Switch