IPP034N03LGHKSA1

MOSFET (Metal Oxide) N-Channel Tube 3.4mOhm @ 30A, 10V ±20V 5300pF @ 15V 25nC @ 4.5V 30V TO-220-3


  • Manufacturer: Infineon Technologies
  • NO: 376-IPP034N03LGHKSA1
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 10290
  • Description: MOSFET (Metal Oxide) N-Channel Tube 3.4mOhm @ 30A, 10V ±20V 5300pF @ 15V 25nC @ 4.5V 30V TO-220-3 (Kg)

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SPECIFICATIONS

Parameters
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 6.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 5.3nF
Drain to Source Resistance 3.4mOhm
Rds On Max 3.4 mΩ
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 94W Tc
Power Dissipation 94W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V

In Stock

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