IPP023N04NGXKSA1

IPP023N04NGXKSA1 Overview

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10000pF @ 20V maximal input capacitance.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.Pulsed drain current is maximum rated peak drain current 400A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 27 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.By using 40V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).

IPP023N04NGXKSA1 Features

the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 40 ns
based on its rated peak drain current 400A.

IPP023N04NGXKSA1 Applications

There are a lot of Infineon Technologies IPP023N04NGXKSA1 applications of single MOSFETs transistors.

• Synchronous Rectification
• Battery Protection Circuit
• AC-DC Power Supply
• DC/DC converters
• LCD/LED TV
• PFC stages, hard switching PWM stages and resonant switching
• Solar Inverter
• Load switching
• General Purpose Interfacing Switch
• Industrial Power Supplies