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IPN50R3K0CEATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPN50R3K0CEATMA1
- Package: SOT-223-3
- Datasheet:
- Stock: 6208
- Description: IPN50R3K0CEATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 84pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 2.6A |
| Threshold Voltage | 3V |
| Drain-source On Resistance-Max | 3Ohm |
| DS Breakdown Voltage-Min | 500V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 18 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | SOT-223-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | CoolMOS™ CE |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 5W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 400mA, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 30μA |
IPN50R3K0CEATMA1 Description
CoolMOS? is are volutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies.CoolMOS?CE is a price-performance optimized platform enabling to target cost-sensitive Applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits so fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
IPN50R3K0CEATMA1 Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Pb-free plating,Halogen free mold compound
Qualified for standard grade applications
IPN50R3K0CEATMA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
