IPI037N08N3GXKSA1

IPI037N08N3GXKSA1 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 510 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 8110pF @ 40V is its maximum input capacitance.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.In terms of pulsed drain current, it has a maximum of 400A, which is its maximum rated peak drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 23 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.With its 80V power supply, it is capable of handling a dual voltage maximum.This device uses no drive voltage (6V 10V) to reduce its overall power consumption.

IPI037N08N3GXKSA1 Features

the avalanche energy rating (Eas) is 510 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 45 ns
based on its rated peak drain current 400A.

IPI037N08N3GXKSA1 Applications

There are a lot of Infineon Technologies IPI037N08N3GXKSA1 applications of single MOSFETs transistors.

• Lighting
• Industrial Power Supplies
• Load switching
• Telecom 1 Sever Power Supplies
• Motor drives and Uninterruptible Power Supplies
• AC-DC Power Supply
• Consumer Appliances
• Server power supplies
• LCD/LED/ PDP TV Lighting
• Lighting, Server, Telecom and UPS.