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MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 950m Ω @ 1.5A, 10V ±20V 280pF @ 100V 13nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Infineon Technologies
- NO: 376-IPD60R950C6
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1023
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 950m Ω @ 1.5A, 10V ±20V 280pF @ 100V 13nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2008 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 37W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 950m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 130μA |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 4.4A |
| Drain-source On Resistance-Max | 0.95Ohm |
| Pulsed Drain Current-Max (IDM) | 12A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 46 mJ |
| RoHS Status | ROHS3 Compliant |
IPD60R950C6 Description
CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler
IPD60R950C6Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Fully qualified according to JEDEC for Industrial Applications
Pb-free plating, Halogen free mold compound
IPD60R950C6 Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
