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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 600m Ω @ 2.4A, 10V ±20V 557pF @ 100V 12nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Infineon Technologies
- NO: 376-IPD60R600P6
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 9273
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 600m Ω @ 2.4A, 10V ±20V 557pF @ 100V 12nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | CoolMOS™ P6 |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 63W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 600m Ω @ 2.4A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 557pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 7.3A |
| Drain-source On Resistance-Max | 0.6Ohm |
| Pulsed Drain Current-Max (IDM) | 18A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 133 mJ |
| RoHS Status | ROHS3 Compliant |
IPD60R600P6 Description
Infineon's CoolMOS Super Junction P6 MOSFET series is designed to achieve higher system efficiency while making it easy to design. CoolMOS powered P6 narrows the gap between technologies focused on providing ultimate performance and technologies focused on ease of use.
IPD60R600P6 Features
Reduced gate charge (Q g)
Higher V th
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
CoolMOS? quality with over 12 years manufacturing experience in superjunction technology
IPD60R600P6 Applications
PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
