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ContactIPD60R380C6
IPD60R380C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD60R380C6
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8564
- Description: IPD60R380C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2008 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH VOLTAGE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 83W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 380m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 320μA |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 10.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 10.6A |
| Drain-source On Resistance-Max | 0.38Ohm |
| Pulsed Drain Current-Max (IDM) | 30A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 210 mJ |
| RoHS Status | ROHS3 Compliant |
IRFR3910PBF Description
CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
IRFR3910PBF Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive,Pb-free plating, Halogen free
Fully qualified according to JEDEC for Industrial Applications
IRFR3910PBF Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g- PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
