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IPD60R180P7SAUMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD60R180P7SAUMA1
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 7701
- Description: IPD60R180P7SAUMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 72W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 72W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 280μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1081pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 18A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 85 ns |
| Continuous Drain Current (ID) | 18A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 53A |
| Avalanche Energy Rating (Eas) | 56 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 2.55mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 18 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | CoolMOS™ P7 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
IPD60R180P7SAUMA1 Description
Infineon Technologies pioneered the CoolMOSTM 7th generation platform, a new technology for high voltage power MOSFETs based on the superjunction (SJ) principle. The CoolMOSTM P7 series, which operates at 600V, is the successor to the CoolMOSTM P6 series. It combines the advantages of a rapid switching SJ MOSFET with exceptional ease of use, such as reduced ringing, superior body diode resilience against harsh commutation, and excellent ESD capability. Switching applications are also more efficient, smaller, and cooler due to exceptionally reduced switching and conduction losses.
IPD60R180P7SAUMA1 Features
?Excellent commutation aiggedness makes it suitable for both hard and soft switching (PFC and LLC).
?An important reduction in switching and conduction losses has been achieved.
?All items have excellent ESD robustness >2kV (HBM).
?Better RDs(on>/package products than the competitors, thanks to a low Ros(ort)*A (less than 10hm*mm2)
?Product validation in accordance with JEDEC standards
IPD60R180P7SAUMA1 Applications
Switching applications
