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ContactIPD50R500CEATMA1
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 500mOhm @ 2.3A, 13V ±20V 433pF @ 100V 18.7nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Infineon Technologies
- NO: 376-IPD50R500CEATMA1
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 17944
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 500mOhm @ 2.3A, 13V ±20V 433pF @ 100V 18.7nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 57W Tc |
| Element Configuration | Single |
| Power Dissipation | 57W |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 2.3A, 13V |
| Vgs(th) (Max) @ Id | 3.5V @ 200μA |
| Input Capacitance (Ciss) (Max) @ Vds | 433pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18.7nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 7.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 433pF |
| Drain to Source Resistance | 500mOhm |
| Rds On Max | 500 mΩ |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | PG-TO252-3 |
| Weight | 3.949996g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | CoolMOS™ CE |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
