IPD50P04P413ATMA1

IPD50P04P413ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IPD50P04P413ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 3438
  • Description: IPD50P04P413ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 58W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 12.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 85μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -40V
Drain-source On Resistance-Max 0.0126Ohm
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 18 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPD50P04P413ATMA1 Description


IPD50P04P413ATMA1 is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 40V. The operating temperature of IPD50P04P413ATMA1 is -55°C~175°C TJ and its maximum power dissipation are 58W Tc. IPD50P04P413ATMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn-On Delay Time of IPD50P04P413ATMA1 is 17 ns and its Turn-Off Delay Time is 22 ns.



IPD50P04P413ATMA1 Features


  • P-channel - Normal Level - Enhancement mode

  • AEC qualified

  • MSL1 up to 260°C peak reflow

  • 175°C operating temperature

  • Green package (RoHS compliant)

  • 100% Avalanche tested



IPD50P04P413ATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


In Stock

Please send RFQ , we will respond immediately.