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IPD50N10S3L16ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD50N10S3L16ATMA1
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 633
- Description: IPD50N10S3L16ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 100W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 60μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4180pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Rise Time | 5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 29 ns |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain-source On Resistance-Max | 0.0199Ohm |
| Pulsed Drain Current-Max (IDM) | 200A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PSSO-G2 |
IPD50N10S3L16ATMA1 Overview
A device's maximum input capacitance is 4180pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.Its turn-off delay time is 29 ns, which is the time to charge the device's input capacitance before drain current conduction begins.IDM is the?maximum rated peak drain current?for a power MOSFET, and its maximal pulsed drain current is 200A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Powered by 100V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPD50N10S3L16ATMA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 29 ns
based on its rated peak drain current 200A.
IPD50N10S3L16ATMA1 Applications
There are a lot of Infineon Technologies IPD50N10S3L16ATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Solar Inverter
- DC-to-DC converters
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- LCD/LED/ PDP TV Lighting
- Telecom 1 Sever Power Supplies
- Consumer Appliances
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Micro Solar Inverter
