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IPD50N06S4L12ATMA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD50N06S4L12ATMA2
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8973
- Description: IPD50N06S4L12ATMA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 50W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 12m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 20μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2890pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Rise Time | 2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Avalanche Energy Rating (Eas) | 33 mJ |
| RoHS Status | ROHS3 Compliant |
IPD50N06S4L12ATMA2 Description
The IPD50N06S4L12ATMA2 is an OptiMOS?-T2 Power-Transistor. Three terminal devices known as power transistors are made of semiconductor materials. They have collector, base, and emitter terminals. These gadgets are specially made to handle high current-voltage ratings.
IPD50N06S4L12ATMA2 Features
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
N-channel - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
IPD50N06S4L12ATMA2 Applications
Switch-mode power supplies (SMPS) Relays
Converters
Power amplifiers
Controlling
Generate electrical signals
