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IPD33CN10NGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD33CN10NGATMA1
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2142
- Description: IPD33CN10NGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 58W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 58W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 27A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 29μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 27A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Rise Time | 21ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 27A |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 108A |
| Avalanche Energy Rating (Eas) | 47 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IPD33CN10NGATMA1 Overview
IPD33CN10NGATMA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IPD33CN10NGATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 47 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1570pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 27A.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 108A, which is its maximum rated peak drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The maximum dual supply voltage can be supported by 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IPD33CN10NGATMA1 Features
the avalanche energy rating (Eas) is 47 mJ
a continuous drain current (ID) of 27A
the turn-off delay time is 17 ns
based on its rated peak drain current 108A.
IPD33CN10NGATMA1 Applications
There are a lot of Infineon Technologies IPD33CN10NGATMA1 applications of single MOSFETs transistors.
DC/DC converters
Lighting, Server, Telecom and UPS.
Motor Drives and Uninterruptible Power Supples
DC-to-DC converters
Telecom 1 Sever Power Supplies
PFC stages, hard switching PWM stages and resonant switching
Synchronous Rectification
Battery Protection Circuit
Solar Inverter
Server power supplies
