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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13m Ω @ 30A, 10V ±20V 1800pF @ 25V 69nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Infineon Technologies
- NO: 376-IPD30N06S2L-13
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1994
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13m Ω @ 30A, 10V ±20V 1800pF @ 25V 69nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain-source On Resistance-Max | 0.017Ohm |
| Pulsed Drain Current-Max (IDM) | 200A |
| DS Breakdown Voltage-Min | 55V |
| Avalanche Energy Rating (Eas) | 240 mJ |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 136W Tc |
| Operating Mode | ENHANCEMENT MODE |
IPD30N06S2L-13 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 240 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1800pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 30A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.Operating this transistor requires a 55V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPD30N06S2L-13 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 200A.
a 55V drain to source voltage (Vdss)
IPD30N06S2L-13 Applications
There are a lot of Infineon Technologies IPD30N06S2L-13 applications of single MOSFETs transistors.
- Industrial Power Supplies
- General Purpose Interfacing Switch
- LCD/LED/ PDP TV Lighting
- Uninterruptible Power Supply
- Solar Inverter
- Consumer Appliances
- Load switching
- Motor control
- Motor Drives and Uninterruptible Power Supples
- Power Management Functions
