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ContactIPD200N15N3GATMA1
IPD200N15N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD200N15N3GATMA1
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 716
- Description: IPD200N15N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 150V |
| Drain-source On Resistance-Max | 0.02Ohm |
| Pulsed Drain Current-Max (IDM) | 200A |
| Avalanche Energy Rating (Eas) | 170 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 150W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 90μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1820pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 8V 10V |
IPD200N15N3GATMA1 MOSFET Description
In comparison to the next-best competition, the 150V IPD200N15N3GATMA1 MOSFET uses the OptiMOSTM to reduce R DS(on) by 40% and figure of merit (FOM) by 45%. This significant advancement opens up new options, such as switching from led to SMD packaging or essentially replacing two outdated components with a single OptiMOSTM component. The part has less paralleling required and increased efficiency overall.
IPD200N15N3GATMA1 MOSFET Features
World's lowest R DS(on)
MSL1 rated 2
RoHS compliant-halogen free
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Excellent switching performance
IPD200N15N3GATMA1 MOSFET Applications
Motor control for 48V–8 0V systems (i.e. domestic vehicles, power tools, trucks)
Synchronous rectification for AC-DC SMPS
Isolated DC-DC converters (telecom and datacom systems)
Uninterruptable power supplies (UPS)
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
