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ContactIPD110N12N3GATMA1
IPD110N12N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD110N12N3GATMA1
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6342
- Description: IPD110N12N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 136W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 83μA (Typ) |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4310pF @ 60V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 75A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 120V |
| Drain-source On Resistance-Max | 0.011Ohm |
| Avalanche Energy Rating (Eas) | 120 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IPD110N12N3GATMA1 Description
Power transistor IPD110N12N3GATMA1 is a three-terminal device composed of semiconductor materials. They are characterized by transmitter, base and collector. These devices are specially designed to control high rated current-voltage.
IPD110N12N3GATMA1 Features
N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target application
Halogen free according to IEC61249-2-21 *
Ideal for high-frequency switching and synchronous rectification
IPD110N12N3GATMA1 Applications
high-and low-voltage applications
