IPD096N08N3GATMA1

Trans MOSFET N-CH 80V 73A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • NO: 376-IPD096N08N3GATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 2633
  • Description: Trans MOSFET N-CH 80V 73A 3-Pin(2+Tab) TO-252(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.6m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 80V
Drain Current-Max (Abs) (ID) 73A
Drain-source On Resistance-Max 0.0096Ohm
Pulsed Drain Current-Max (IDM) 292A
Avalanche Energy Rating (Eas) 90 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

In Stock

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