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IPD088N06N3GBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD088N06N3GBTMA1
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 7633
- Description: IPD088N06N3GBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 71W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 71W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 34μA |
| Halogen Free | Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 50A |
| Threshold Voltage | 3V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0088Ohm |
| Pulsed Drain Current-Max (IDM) | 200A |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
IPD088N06N3GBTMA1 Description
IPD088N06N3GBTMA1 is an OptiMOSTM3 Power-Transistor. The transistor IPD088N06N3GBTMA1 can be applied in Communications equipment, Broadband fixed line access, Industrial, Motor drives, Enterprise systems, and Enterprise projectors applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IPD088N06N3GBTMA1 in the PG-TO252-3 package with 71W Power dissipations.
IPD088N06N3GBTMA1 Features
Ideal for high-frequency switching and sync. rec.
Optimized technology for DCIDC converters
Excellent gate charge x R Ds/(on) product (FOM)
Very low on-resistance Ros(on)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC for target applications
IPD088N06N3GBTMA1 Applications
Communications equipment
Broadband fixed line access
Industrial
Motor drives
Enterprise systems
Enterprise projectors
