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ContactIPD079N06L3GBTMA1
IPD079N06L3GBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPD079N06L3GBTMA1
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 3138
- Description: IPD079N06L3GBTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Rise Time | 26ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | 50A |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0079Ohm |
| Pulsed Drain Current-Max (IDM) | 200A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 79W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 79W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.9m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 34μA |
| Halogen Free | Not Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4900pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
IPD079N06L3GBTMA1 Description
IPD079N06L3GBTMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a breakdown voltage of 60V. The operating temperature of the IPD079N06L3GBTMA1 is -55°C~175°C TJ and its maximum power dissipation is 79W Tc. IPD079N06L3GBTMA1 has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of IPD079N06L3GBTMA1 is 15 ns.
IPD079N06L3GBTMA1 Features
Drain-source On Resistance-Max: 0.0079Ohm
Gate to Source Voltage (Vgs): 20V
Continuous Drain Current (ID): 50A
Fall Time (Typ): 7 ns
Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 30V
IPD079N06L3GBTMA1 Description
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