IPD035N06L3GATMA1

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5m Ω @ 90A, 10V ±20V 13000pF @ 30V 79nC @ 4.5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63


  • Manufacturer: Infineon Technologies
  • NO: 376-IPD035N06L3GATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 10958
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5m Ω @ 90A, 10V ±20V 13000pF @ 30V 79nC @ 4.5V 60V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 167W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 93μA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 79nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 90A
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 162A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 165 mJ
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.