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IPB64N25S320ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPB64N25S320ATMA1
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 7022
- Description: IPB64N25S320ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Supplier Device Package | PG-TO263-3-2 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| Series | OptiMOS™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 300W Tc |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 64A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 64A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 64A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 250V |
| Input Capacitance | 7nF |
| Drain to Source Resistance | 17.5mOhm |
| Rds On Max | 20 mΩ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IPB64N25S320ATMA1 Description
With Infineon Technologies' IPB64N25S320ATMA1 power MOSFET, you'll be able to switch between different lines in addition to amplifying electronic signals. It can dissipate up to 300000 mW of power. Its channel is in the process of being improved. Optimos-t technology was used to create this device. This MOSFET transistor can operate at temperatures as low as -55°C and as high as 175°C.
IPB64N25S320ATMA1 Features
AEC qualified
100% Avalanche tested
175°C operating temperature
MSL1 up to 260°C peak reflow
N-channel - Enhancement mode
Green Product (RoHS compliant)
IPB64N25S320ATMA1 Application
Hybrid inverter
