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ContactIPB200N25N3GATMA1
IPB200N25N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPB200N25N3GATMA1
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 4370
- Description: IPB200N25N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Pulsed Drain Current-Max (IDM) | 256A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 300W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 64A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 7100pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 64A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
| Rise Time | 20ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 64A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 250V |
| Drain-source On Resistance-Max | 0.02Ohm |
Description
The IPB200N25N3GATMA1 is an N-channel Power MOSFET based on the OptiMOSTM industry-leading benchmark technology. It's ideal for 48V systems, DC-to-DC converters, uninterruptible power supply (UPS), and inverters that require synchronous rectification. N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of field-effect transistor that belongs to the field-effect transistors category (FET). The capacitor is used to power MOSFET transistors. An insulated-gate field-effect transistor is another name for this type of transistor (IGFET).
Features
? Normal level N-channel
? The gate charge x R DS(on) product is excellent (FOM)
? R DS on-resistance is extremely low (on)
? Operating temperature of 175 °C
? Lead plating free of pb; RoHS compliance
? JEDEC1) qualified for the intended application
? IEC61249-2-21 certified halogen-free
? Suitable for synchronous rectification and high-frequency switching
Applications
? Power Management
? Motor Drive & Control
? Industrial, Lighting
? Audio
? Circuit
