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ContactIPB019N08N3GATMA1
IPB019N08N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IPB019N08N3GATMA1
- Package: TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet:
- Stock: 4593
- Description: IPB019N08N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 7 |
| JESD-30 Code | R-PSSO-G6 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 300W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 28 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.9m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 270μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 14200pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 206nC @ 10V |
| Rise Time | 73ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 86 ns |
| Continuous Drain Current (ID) | 180A |
| Threshold Voltage | 2.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 80V |
| Drain to Source Breakdown Voltage | 80V |
| Max Junction Temperature (Tj) | 175°C |
| Height | 4.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
IPB019N08N3GATMA1 Description
The IPB019N08N3GATMA1 from Infineon Technologies is an OptiMOSTM 3 N-channel Power Transistor with exceptional gate charge x R DS (ON) product (FOM) and dual-sided cooling. DC/DC converter technology has been improved. A single component can solve both your amplification and switching issues. This MOSFET transistor has a temperature range of -55 to 175 degrees Celsius. This N channel MOSFET transistor operates in enhancement mode. IPB019N08N3GATMA1 employs Optimos technology.
IPB019N08N3GATMA1 Features
Halogen-free
Excellent gate charge
Very low on-resistance
100% Avalanche tested
Low parasitic inductance
IPB019N08N3GATMA1 Applications
Power Management
Consumer Electronics
Motor Drive & Control
Communications & Networking
