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ContactIMW120R220M1HXKSA1
SiCFET (Silicon Carbide) N-Channel 286m Ω @ 4A, 18V +23V, -7V 289pF @ 800V 8.5nC @ 18V 1.2kV TO-247-3
- Manufacturer: Infineon Technologies
- NO: 376-IMW120R220M1HXKSA1
- Package: TO-247-3
- Datasheet:
- Stock: 564
- Description: SiCFET (Silicon Carbide) N-Channel 286m Ω @ 4A, 18V +23V, -7V 289pF @ 800V 8.5nC @ 18V 1.2kV TO-247-3 (Kg)
- Delivery:
- Payment:
In Stock
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Operating Temperature | -55°C~175°C TJ |
| Series | CoolSiC™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Technology | SiCFET (Silicon Carbide) |
| Power Dissipation-Max | 75W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 286m Ω @ 4A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 1.6mA |
| Input Capacitance (Ciss) (Max) @ Vds | 289pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 13A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 18V |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drive Voltage (Max Rds On,Min Rds On) | 15V 18V |
| Vgs (Max) | +23V, -7V |
| RoHS Status | ROHS3 Compliant |
