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ContactIAUT300N10S5N015ATMA1
IAUT300N10S5N015ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IAUT300N10S5N015ATMA1
- Package: 8-PowerSFN
- Datasheet:
- Stock: 6232
- Description: IAUT300N10S5N015ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | PG-HSOF-8 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | OptiMOS™-5 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-F2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 375W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 375W |
| Case Connection | DRAIN |
| Turn On Delay Time | 29 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.5m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 275μA |
| Input Capacitance (Ciss) (Max) @ Vds | 16011pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 300A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 216nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 300A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Avalanche Energy Rating (Eas) | 652 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Height | 2.4mm |
| RoHS Status | ROHS3 Compliant |
IAUT300N10S5N015ATMA1 Description
IAUT300N10S5N015ATMA1 is a type of N-channel enhancement-mode OptiMOS?-5 power transistor. Based on its high quality and reliable performance, it can be used for various applications, including microcontrollers and microprocessors, as well as digital circuits and analog circuits.
IAUT300N10S5N015ATMA1 Features
Safe area protection
Excellent thermal stability
Small breakdown voltage
Available in the P/G-HSOF-8-1 package
IAUT300N10S5N015ATMA1 Applications
Digital circuit
Analog circuit
Microprocessor and microcontroller
