HUF75345G3

HUF75345G3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-HUF75345G3
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 1889
  • Description: HUF75345G3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series UltraFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 7mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 75A
Number of Elements 1
Power Dissipation-Max 325W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 325W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 275nC @ 20V
Rise Time 118ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

HUF75345G3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4000pF @ 25V.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 42 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.Its overall power consumption can be reduced by using drive voltage (10V).

HUF75345G3 Features


a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 42 ns
a threshold voltage of 4V

HUF75345G3 Applications


There are a lot of ON Semiconductor HUF75345G3 applications of single MOSFETs transistors.

  • Load switching
  • LCD/LED/ PDP TV Lighting
  • Telecom 1 Sever Power Supplies
  • Synchronous Rectification
  • Power Tools
  • Motor drives and Uninterruptible Power Supplies
  • Motor Drives and Uninterruptible Power Supples
  • Uninterruptible Power Supply
  • Lighting
  • Server power supplies

In Stock

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