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ContactHUF75344P3
HUF75344P3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-HUF75344P3
- Package: TO-220-3
- Datasheet:
- Stock: 3281
- Description: HUF75344P3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | UltraFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 75A |
| Number of Elements | 1 |
| Power Dissipation-Max | 285W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 285W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 20V |
| Rise Time | 125ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 57 ns |
| Turn-Off Delay Time | 46 ns |
| Continuous Drain Current (ID) | 75A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.008Ohm |
| Drain to Source Breakdown Voltage | 55V |
| Height | 16.3mm |
| Length | 10.67mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
HUF75344P3 Description
The ground-breaking UltraFET manufacturing technique is used to create these N-Channel power MOSFETs. The lowest on-resistance per silicon area is achieved using this cutting-edge process technology, producing exceptional performance. This device has a very low reverse recovery time and stored charge, and it can sustain high energy in avalanche mode. It was created for use in situations where power economy was crucial, including switching converters, switching regulators, motor and relay drivers, low-voltage bus switches, and power management in portable and battery-powered goods.
HUF75344P3 Features
75A, 55V
Simulation Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
HUF75344P3 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
