HUF75344G3

HUF75344G3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-HUF75344G3
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 9217
  • Description: HUF75344G3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series UltraFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 8MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 75A
Number of Elements 1
Power Dissipation-Max 285W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 285W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 20V
Rise Time 125ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 57 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 75A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
Nominal Vgs 4 V

HUF75344G3 Description

The HUF75344G3 is an UltraFET Power MOSFET with an N-channel configuration. With this innovative process method, the lowest achievable on-resistance per silicon area is achieved, leading to exceptional performance. In the avalanche mode, this device can resist a lot of energy, and the diode has a very short reverse recovery time and a lot of stored charge. It was created for power-efficient applications such as switching regulators, switching converters, relay drivers, low-voltage bus switches, and power management in portable and battery-operated goods.


HUF75344G3 Features

  • 75A, 55V

  • UIS Rating Curve

  • Related Literature

  • Simulation Models

  • Temperature Compensated PSPICE? and SABER?Models

  • Thermal Impedance PSPICE and SABER Models

  • Peak Current vs Pulse Width Curve

  • TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”


HUF75344G3 Applications

  • Other Audio & Video

  • Power Management

  • Speed control of Motors

  • General-purpose NPN transistor

  • Inverter and other rectifier circuits

  • Darlington Pair


In Stock

Please send RFQ , we will respond immediately.