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FQU17P06TU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQU17P06TU
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 2513
- Description: FQU17P06TU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 135MOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | -12A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta 44W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 13 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 135m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 100ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | -12A |
| Threshold Voltage | -4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 48A |
| Height | 7.57mm |
| Length | 6.8mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Weight | 343.08mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
FQU17P06TU Description
The FQU17P06TU is a P-channel enhancement mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology FQU17P06TU has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The onsemi FQU17P06TU is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQU17P06TU Features
-12A, -60V, RDS(on) = 135mΩ(Max.) @VGS = -10 V, ID = -6A
Low Gate Charge ( Typ. 21nC)
Low Crss ( Typ. 80pF)
100% Avalanche Tested
In the TO-251-3 package
FQU17P06TU Applications
LED TV
Switched-mode power supplies
Audio amplifier
DC motor control
Variable switching power applications
