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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 350m Ω @ 850mA, 10V ±20V 290pF @ 25V 6nC @ 5V TO-261-4, TO-261AA
- Manufacturer: ON Semiconductor
- NO: 598-FQT7N10LTF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 5718
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 350m Ω @ 850mA, 10V ±20V 290pF @ 25V 6nC @ 5V TO-261-4, TO-261AA (Kg)
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 350mOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 1.7A |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 350m Ω @ 850mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 5V |
| Rise Time | 100ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 1.7A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 6.8A |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 3.56mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
FQT7N10LTF Description
FQT7N10LTF is an N-channel Power MOSFET from the manufacturer of ON Semiconductor with a voltage of 100V. This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQT7N10LTF Features
1.7A, 100V, RDS(on) = 350mΩ(Max.) @VGS = 10 V, ID = 0.85A
Low gate charge ( Typ. 5.8nC)
Low Crss ( Typ. 10pF)
100% avalanche tested
FQT7N10LTF Applications
LED TV
Consumer Appliances
Lighting
