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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 20 Ω @ 100mA, 10V ±30V 195pF @ 25V 7.2nC @ 10V TO-261-3
- Manufacturer: ON Semiconductor
- NO: 598-FQT1N80TF-WS
- Package: TO-261-3
- Datasheet:
- Stock: 6788
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 20 Ω @ 100mA, 10V ±30V 195pF @ 25V 7.2nC @ 10V TO-261-3 (Kg)
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| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 20 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 200mA Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 200mA |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 0.0002A |
| Drain to Source Breakdown Voltage | 800V |
| Feedback Cap-Max (Crss) | 5 pF |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-3 |
| Number of Pins | 3 |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.1W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
FQT1N80TF-WS Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 195pF @ 25V.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.0.0002A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 15 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.Using drive voltage (10V) reduces this device's overall power consumption.
FQT1N80TF-WS Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 15 ns
a threshold voltage of 5V
FQT1N80TF-WS Applications
There are a lot of ON Semiconductor FQT1N80TF-WS applications of single MOSFETs transistors.
- DC-to-DC converters
- Battery Protection Circuit
- Industrial Power Supplies
- Lighting
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Motor control
- Micro Solar Inverter
- Motor Drives and Uninterruptible Power Supples
- Load switching
- Server power supplies
