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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 140m Ω @ 1.4A, 10V ±25V 310pF @ 25V 7.5nC @ 10V TO-261-4, TO-261AA
- Manufacturer: ON Semiconductor
- NO: 598-FQT13N06TF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 1009
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 140m Ω @ 1.4A, 10V ±25V 310pF @ 25V 7.5nC @ 10V TO-261-4, TO-261AA (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 140mOhm |
| Terminal Finish | TIN |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2.8A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.1W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 140m Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 8 ns |
| Continuous Drain Current (ID) | 2.8A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 60V |
| Feedback Cap-Max (Crss) | 20 pF |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.56mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQT13N06TF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 310pF @ 25V is its maximum input capacitance.Its continuous drain current is 2.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 8 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.In addition to reducing power consumption, this device uses drive voltage (10V).
FQT13N06TF Features
a continuous drain current (ID) of 2.8A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 8 ns
a threshold voltage of 4V
FQT13N06TF Applications
There are a lot of ON Semiconductor FQT13N06TF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- DC/DC converters
- Uninterruptible Power Supply
- Power Management Functions
- Load switching
- Battery Protection Circuit
- General Purpose Interfacing Switch
- Lighting, Server, Telecom and UPS.
- Micro Solar Inverter
- Synchronous Rectification for ATX 1 Server I Telecom PSU
