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FQT13N06LTF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQT13N06LTF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 3483
- Description: FQT13N06LTF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 21 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 110mOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 2.8A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.1W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 5V |
| Rise Time | 90ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 2.8A |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.56mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQT13N06LTF Description
FQT13N06LTF belongs to the family of N-channel enhancement-mode QFET? MOSFETs designed based on the proprietary planar stripe and DMOS technology to achieve low on-state resistance, superior switching performance, and high avalanche energy strength. Based on these characteristics, FQT13N06LTF is well suited for switching mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQT13N06LTF Features
Low gate charge
Low on-state resistance
Superior switching performance
High avalanche energy strength
Available in the SOT-223 package
FQT13N06LTF Applications
Switching mode power supplies
Audio amplifier
DC motor control
Variable switching power applications
