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ContactFQPF85N06
FQPF85N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQPF85N06
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 1633
- Description: FQPF85N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 10mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 53A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 62W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 62W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 40 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 26.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4120pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 53A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
| Rise Time | 230ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 175 ns |
| Continuous Drain Current (ID) | 53A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Avalanche Energy Rating (Eas) | 820 mJ |
| Nominal Vgs | 4 V |
| Height | 9.19mm |
| Length | 10.16mm |
| Width | 4.7mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2001 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
Description
The FQPF85N06 is a 60V, 53A, 10m|? N-Channel QFET? MOSFET. The N-Channel enhancement mode power field effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high-energy pulses. These gadgets are ideal for low voltage uses including automotive, DC/DC converters, and high-efficiency switching for power management in mobile and battery-powered products.
Features
Fast switching
100% avalanche tested
Improved dv/dt capability
175??C maximum junction temperature rating
53A, 60V, RDS(on) = 0.010? @VGS = 10 V
Low gate charge ( typical 86 nC)
Low Crss ( typical 165 pF)
Applications
Automotive
DC/DC converters
High-efficiency switching for power management in mobile
Battery-powered products
Switch-mode power supplies (SMPS) Relays
