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ContactFQPF70N10
FQPF70N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQPF70N10
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 3948
- Description: FQPF70N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 23MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 35A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 62W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 62W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 17.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 35A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 470ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 160 ns |
| Turn-Off Delay Time | 130 ns |
| Continuous Drain Current (ID) | 35A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 100V |
| Height | 9.19mm |
| Length | 10.16mm |
| Width | 4.7mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQPF70N10 Description
The ON Semiconductor Semiconductor FQPF70N10 is an N-Channel enhancement mode power MOSFET that uses the company's unique planar stripe and DMOS technology. FQPF70N10 advanced MOSFET technology has been specifically developed to reduce on-state resistance, improve switching performance, and provide strong avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications all benefit from FQPF70N10 MOSFETs.
FQPF70N10 Features
35A, 100V, RDS(on) = 23mΩ(Max.) @VGS = 10 V, ID = 17.5A
Low gate charge ( Typ. 85nC)
Low Crss ( Typ. 150pF)
100% avalanche tested
175°C maximum junction temperature rating
FQPF70N10 Applications
Other Industrial
DC/DC converter
Power management
Load switch
