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ContactFQPF20N06L
FQPF20N06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQPF20N06L
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 9115
- Description: FQPF20N06L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 15.7A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 30W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 30W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 7.85A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 15.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
| Rise Time | 156ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 15.7A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.07Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 62.8A |
| Height | 9.19mm |
| Length | 10.16mm |
| Width | 4.7mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2001 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
This FQPF20N06L N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. These devices are appropriate for applications such as switched mode power supply, audio amplifiers, DC motor control, and variable switching power.
FQPF20N06L Features
15.7A, 60V, RDS(on) = 52mΩ(Max.) @VGS = 10 V, ID = 7.85A
Low gate charge ( Typ. 9.5nC)
Low Crss ( Typ. 35pF)
100% avalanche tested
175°C maximum junction temperature rating
FQPF20N06L Applications
PDP TV
LED TV
LCD TV
