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ContactFQP9N90C
MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 4A, 10V ±30V 2730pF @ 25V 58nC @ 10V TO-220-3
- Manufacturer: ON Semiconductor
- NO: 598-FQP9N90C
- Package: TO-220-3
- Datasheet:
- Stock: 3779
- Description: MOSFET (Metal Oxide) N-Channel Tube 1.4 Ω @ 4A, 10V ±30V 2730pF @ 25V 58nC @ 10V TO-220-3 (Kg)
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| Parameters | |
|---|---|
| Fall Time (Typ) | 75 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain to Source Breakdown Voltage | 900V |
| Dual Supply Voltage | 900V |
| Avalanche Energy Rating (Eas) | 900 mJ |
| Nominal Vgs | 5 V |
| Height | 9.4mm |
| Length | 10.1mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2003 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 1.4Ohm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 900V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 8A |
| Number of Elements | 1 |
| Power Dissipation-Max | 205W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 205W |
| Turn On Delay Time | 50 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2730pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
| Rise Time | 120ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
FQP9N90C Description
This N-channel enhanced power MOSFET FQP9N90C is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
FQP9N90C Features
8A, 900V, RDS(on) = 1.4Ω(Max.) @VGS = 10 V, ID = 4A
Low gate charge ( Typ. 45nC)
Low Crss ( Typ. 14pF)
100% avalanche tested
FQP9N90C Applications
Lighting
