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FQP85N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQP85N06
- Package: TO-220-3
- Datasheet:
- Stock: 8545
- Description: FQP85N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 10MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 85A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Voltage | 60V |
| Power Dissipation-Max | 160W Tc |
| Element Configuration | Single |
| Current | 85A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 160W |
| Turn On Delay Time | 40 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 42.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4120pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 85A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
| Rise Time | 230ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 175 ns |
| Continuous Drain Current (ID) | 85A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Nominal Vgs | 4 V |
| Height | 9.4mm |
| Length | 10.1mm |
| Width | 4.7mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
FQP85N06 Description
The FQP85N06 is a TO-220 packaging through-hole 60V N channel enhancement mode power QFET MOSFET. This device uses planar stripe and DMOS technology that has been specifically designed to reduce on-state resistance, improve switching performance, and increase avalanche energy strength. It can be used in applications such as switch-mode power supplies, audio amplifiers, DC motor control, and variable switching power.
FQP85N06 Features
Gate to source voltage of ±25V
Continuous drain current (Id) of 85A
Power dissipation (Pd) of 160W
The low gate charge is typical 86nC
Low reverse transfer capacitance of typically 165pF
Drain to source voltage (Vds) of 60V
Low on-state resistance of 800mohm at Vgs 10V
Operating temperature range from -55°C to 175°C
FQP85N06 Applications
Motor drive
DC motor control
Power management
Switch-mode power supplies
Audio amplifier
Switching power applications
DC/DC converters
Other Audio & Video
