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MOSFET (Metal Oxide) N-Channel Tube 22m Ω @ 25A, 10V ±25V 1540pF @ 25V 41nC @ 10V TO-220-3
- Manufacturer: ON Semiconductor
- NO: 598-FQP50N06
- Package: TO-220-3
- Datasheet:
- Stock: 2919
- Description: MOSFET (Metal Oxide) N-Channel Tube 22m Ω @ 25A, 10V ±25V 1540pF @ 25V 41nC @ 10V TO-220-3 (Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2003 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 22mOhm |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 50A |
| Number of Elements | 1 |
| Power Dissipation-Max | 120W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 120W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 22m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1540pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Rise Time | 105ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 60 ns |
| Continuous Drain Current (ID) | 50A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 200A |
| Avalanche Energy Rating (Eas) | 490 mJ |
| Height | 9.4mm |
| Length | 10.1mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQP50N06 Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
FQP50N06 Features
50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
Low gate charge ( typical 31 NC)
Low Cross ( typical 65 pF)
Fast switching
100% avalanche tested
Improved DV/dt capability
175°C maximum junction temperature rating
FQP50N06 Applications
General-purpose amplifier
Switching applications
Power management
Industrial
