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ContactFQP32N20C
MOSFET (Metal Oxide) N-Channel Tube 82m Ω @ 14A, 10V ±30V 2200pF @ 25V 110nC @ 10V TO-220-3
- Manufacturer: ON Semiconductor
- NO: 598-FQP32N20C
- Package: TO-220-3
- Datasheet:
- Stock: 8842
- Description: MOSFET (Metal Oxide) N-Channel Tube 82m Ω @ 14A, 10V ±30V 2200pF @ 25V 110nC @ 10V TO-220-3 (Kg)
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| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 28A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Rise Time | 270ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 210 ns |
| Turn-Off Delay Time | 245 ns |
| Continuous Drain Current (ID) | 28A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.082Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Avalanche Energy Rating (Eas) | 955 mJ |
| Height | 9.4mm |
| Length | 10.1mm |
| Width | 4.7mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 28A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 156W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 156W |
| Turn On Delay Time | 25 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 82m Ω @ 14A, 10V |
FQP32N20C Description
FQP32N20C power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. FQP32N20C MOSFETs are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQP32N20C Features
Low Crss ( Typ. 185pF)
100% avalanche tested
28A, 200V, RDS(on) = 82mΩ(Max.) @VGS = 10 V, ID = 14A
Low gate charge ( Typ. 82.5nC)
FQP32N20C Applications
Other Audio & Video
LED driver
Power management
Low-side load switch
Switching circuits
