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ContactFQP19N20C
MOSFET (Metal Oxide) N-Channel Tube 170m Ω @ 9.5A, 10V ±30V 1080pF @ 25V 53nC @ 10V TO-220-3
- Manufacturer: ON Semiconductor
- NO: 598-FQP19N20C
- Package: TO-220-3
- Datasheet:
- Stock: 4371
- Description: MOSFET (Metal Oxide) N-Channel Tube 170m Ω @ 9.5A, 10V ±30V 1080pF @ 25V 53nC @ 10V TO-220-3 (Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 170mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 19A |
| Number of Elements | 1 |
| Power Dissipation-Max | 139W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 139W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 170m Ω @ 9.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Rise Time | 150ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 115 ns |
| Turn-Off Delay Time | 135 ns |
| Continuous Drain Current (ID) | 19A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 76A |
| Height | 9.4mm |
| Length | 10.1mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
FQP19N20C MOSFET Description
The N-Channel MOSFET FQP19N20C is produced using Onsemi's proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP19N20C has a high voltage rating and is suitable for high power load switching.
FQP19N20C MOSFET Features
19A, 200V, RDS(on) = 170mΩ(Max.) @VGS = 10 V, ID = 9.5A
Low gate charge ( Typ. 40.5nC)
Low Crss ( Typ. 85pF)
Fast switching performance
100% avalanche tested
FQP19N20C MOSFET Applications
Three-Phase Bridge for Brushless DC Motor Control
Up to 12s Battery Power Tools
High Current, High-Speed Switching
Power Converters with Multi-Megahertz Operation
Other Half and Full-Bridge Topologies
Buck Converters
Lighting Applications
PFC Controllers
Off-Line Power Supplies
Adapters
