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FQP17N40 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQP17N40
- Package: TO-220-3
- Datasheet:
- Stock: 9664
- Description: FQP17N40 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 270mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 400V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 16A |
| Number of Elements | 1 |
| Power Dissipation-Max | 170W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 170W |
| Turn On Delay Time | 40 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Rise Time | 185ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 105 ns |
| Turn-Off Delay Time | 90 ns |
| Continuous Drain Current (ID) | 16A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 400V |
| Pulsed Drain Current-Max (IDM) | 64A |
| Nominal Vgs | 5 V |
| Height | 9.4mm |
| Length | 10.1mm |
FQP17N40 N-Channel MOSFET is designed for various applications, including switched-mode power supplies, active power factor correction, and electronic lamp ballasts. FQP17N40 MOSFET is ideally suitable for reducing on-state resistance and providing superior switching performance as well as high avalanche energy strength. ON Semiconductor FQP17N40 is ideally suitable for high-voltage applications where current is not an important factor. can be used as a primary side switch for a DC-DC converter that runs off the mains.
FQP17N40 Features
16A, 400V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 8A
Low gate charge ( Typ. 45nC)
Low Crss ( Typ. 30pF)
100% avalanche tested
FQP17N40 Applications
High-voltage applications
Switch
Uninterruptible Power Supply
Other Industrial
DC-DC converter
