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ContactFQP13N50C_F105
MOSFET (Metal Oxide) N-Channel Tube 480m Ω @ 6.5A, 10V ±30V 2055pF @ 25V 56nC @ 10V 500V TO-220-3
- Manufacturer: ON Semiconductor
- NO: 598-FQP13N50C_F105
- Package: TO-220-3
- Datasheet:
- Stock: 7192
- Description: MOSFET (Metal Oxide) N-Channel Tube 480m Ω @ 6.5A, 10V ±30V 2055pF @ 25V 56nC @ 10V 500V TO-220-3 (Kg)
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| Parameters | |
|---|---|
| Terminal Finish | Matte Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 195W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 480m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2055pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 13A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| JEDEC-95 Code | TO-220AB |
| Pulsed Drain Current-Max (IDM) | 52A |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 860 mJ |
| RoHS Status | RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | QFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
